K814P/ k824p/ k844p vishay semiconductors rev. a4, 11jan99 1 (9) optocoupler with phototransistor output description the K814P/ k824p/ k844p consist of a phototransis- tor optically coupled to 2 gallium arsenide infrared-emitting diodes (reversed polarity) in an 4-lead up to 16-lead plastic dual inline package. the elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. applications feature phones, answering machines, pabx, fax machines features endstackable to 2.54 mm (0.1') spacing dc isolation test voltage v io = 5 kv low coupling capacitance of typical 0.3 pf c urrent t ransfer r atio (ctr) of typical 100% low temperature coefficient of ctr wide ambient temperature range u nderwriters l aboratory (ul) 1577 recognized, file number e-76222 csa (cul) 1577 recognized, file number e-76222 double protection coupling system u 14925 coll. emitter anode cath. 4 pin 8 pin 16 pin 13947 c order instruction ordering code ctr ranking remarks K814P < 20% 4 pin single channel k824p < 20% 8 pin dual channel k844p < 20% 16 pin quad channel
K814P/ k824p/ k844p vishay semiconductors rev. a4, 11jan99 2 (9) absolute maximum ratings input (emitter) parameter test conditions symbol value unit reverse voltage v r 6 v forward current i f M ? ??????? ???? ?????? ? ? s i fsm ?? ? ???? ?????????? ? ?? ? c p v 100 mw junction temperature t j 125 c output (detector) parameter test conditions symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 7 v collector current i c 50 ma peak collector current t p /t = 0.5, t p ? ? ? ?? ? ? ???? ?????????? ? ?? ? c p v 150 mw junction temperature t j 125 c coupler parameter test conditions symbol value unit ac isolation test voltage (rms) t = 1 min v io 1) 5 kv total power dissipation t amb ? c p tot 250 mw operating ambient temperature range t amb 40 to +100 c storage temperature range t stg 55 to +125 c soldering temperature 2 mm from case, t ? ? ? ?? ?M c 1) related to standard climate 23/50 din 50014
K814P/ k824p/ k844p vishay semiconductors rev. a4, 11jan99 3 (9) electrical characteristics (t amb = 25 ?? ???? ???????? ??????? ???? ?????????? ???? ??? ?? ?? ???? ??????? ??????? ? ? ? ? ? ? ?? ??M ? ?????? ?????? ? M ? ? ? a output (detector) parameter test conditions symbol min. typ. max. unit collector emitter voltage i c = 100 a v ceo 70 v emitter collector voltage i e = 100 a v eco 7 v collector dark current v ce = 20 v, i f = 0, e = 0 i ceo 100 na coupler parameter test conditions symbol min. typ. max. unit collector emitter saturation voltage i f = ? ? ? ? ? ? ? ????? ? ? ????? ??????? ? ? ? ? ? ?? ? ? ? f c 100 khz coupling capacitance f = 1 mhz c k 0.3 pf current transfer ratio (ctr) parameter test conditions type symbol min. typ. max. unit i c /i f v ce = 5 v, i f = ? ?? ? ??
K814P/ k824p/ k844p vishay semiconductors rev. a4, 11jan99 4 (9) switching characteristics parameter test conditions symbol typ. unit delay time v s = 5 v, i c = 2 ma, r l = 100 (see figure 1) t d 3.0 s rise time s c l (g) t r 3.0 s fall time t f 4.7 s storage time t s 0.3 s turn-on time t on 6.0 s turn-off time t off 5.0 s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k (see figure 2) t on 9.0 s turn-off time s f l (g) t off 18.0 s channel i channel ii 100 50 + 5 v oscilloscope r l > 1 m c l < 20 pf i c = 2 ma ; adjusted through input amplitude i f i f r g = 50 t p t p = 50 s t = 0.01 0 13343 figure 1. test circuit, non-saturated operation channel i channel ii 1 k 50 + 5 v oscilloscope r l > 1 m c l < 20 pf i c i f r g = 50 t p t p = 50 s t = 0.01 0 13344 i f = 10 ma figure 2. test circuit, saturated operation t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time figure 3. switching times
K814P/ k824p/ k844p vishay semiconductors rev. a4, 11jan99 5 (9) typical characteristics (t amb = 25 c, unless otherwise specified) 0 50 100 150 200 250 300 0 40 80 120 p total power dissipation ( mw ) t amb ambient temperature ( c ) 96 11700 tot coupled device phototransistor ir-diode figure 4. total power dissipation vs. ambient temperature 0.1 1.0 10.0 100.0 1000.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f forward voltage ( v ) 96 11862 f i forward current ( ma ) figure 5. forward current vs. forward voltage 25 0 25 50 0 0.5 1.0 1.5 2.0 ctr relative current transfer ratio rel t amb ambient temperature ( c ) 95 11025 75 v ce =5v i f =5ma figure 6. relative current transfer ratio vs. ambient temperature 0255075 1 10 100 1000 10000 i collector dark current, ceo t amb ambient temperature ( c ) 100 95 11026 with open base ( na ) v ce =20v i f =0 figure 7. collector dark current vs. ambient temperature 0.1 1 10 0.01 0.1 1 100 i collector current ( ma ) c i f forward current ( ma ) 100 95 11027 10 v ce =5v figure 8. collector current vs. forward current 0.1 1 10 0.1 1 10 100 v ce collector emitter voltage ( v ) 100 95 10985 i collector current ( ma ) c i f =50ma 5ma 2ma 1ma 20ma 10ma figure 9. collector current vs. collector emitter voltage
K814P/ k824p/ k844p vishay semiconductors rev. a4, 11jan99 6 (9) 110 0 0.2 0.4 0.6 0.8 1.0 v collector emitter saturation voltage ( v ) cesat i c collector current ( ma ) 100 ctr=50% 20% 10% 95 11028 figure 10. collector emitter saturation voltage vs. collector current 0.1 1 10 1 10 100 1000 ctr current transfer ratio ( % ) i f forward current ( ma ) 100 95 11029 v ce =5v figure 11. current transfer ratio vs. forward current 0 5 10 15 0 10 20 30 40 50 i f forward current ( ma ) 20 95 11031 t / t turn on / turn off time ( s ) off on saturated operation v s =5v r l =1k t off t on figure 12. turn on / off time vs. forward current 02 4 6 0 2 4 6 8 10 i c collector current ( ma ) 10 95 11030 t / t turn on / turn off time ( s ) off on non saturated operation v s =5v r l =100 t off t on figure 13. turn on / off time vs. collector current K814P 820utk63 type date code coupling system indicator company logo production location 15083 pin 1 indication (ym) figure 14. marking example
K814P/ k824p/ k844p vishay semiconductors rev. a4, 11jan99 7 (9) dimensions of K814P in mm 14789 weight: ca. 0.25 g creepage distance: 6 mm air path: 6 mm after mounting on pc board dimensions of k824p in mm 14784 weight: ca. 0.55 g creepage distance: 6 mm air path: 6 mm after mounting on pc board 14784
K814P/ k824p/ k844p vishay semiconductors rev. a4, 11jan99 8 (9) dimensions of k844p in mm weight: ca. 1.0 g creepage distance: 6 mm air path: 6 mm after mounting on pc board 14783
K814P/ k824p/ k844p vishay semiconductors rev. a4, 11jan99 9 (9) ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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